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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV99 Ultra fast low-loss controlled avalanche rectifier
Product specification Supersedes data of 1996 Feb 19 2003 Mar 04
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
FEATURES * Glass passivated * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack. DESCRIPTION
BYV99
Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 50 C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 C; see Fig.3; PCB mounting (see Fig.11); averaged over any 20 ms period; see also Fig.6 IFRM IFSM ERSM Tstg Tj repetitive peak forward current non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature see also Fig.10 Ttp = 50 C; see Fig.4 Tamb = 60 C; see Fig.5 t = 10 ms half sine wave; Tj = Tj(max) prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj(max) prior to surge; inductive load switched off CONDITIONS - - - MIN. MAX. 600 600 1 V V A UNIT
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
-
0.55
A
- - - - -65 -65
9 5 20 10 +175 +150
A A A mJ C C
2003 Mar 04
2
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 1 A; Tj = Tj(max); see Fig.7 IF = 1 A; see Fig.7 IR = 0.1 mA VR = VRRMmax; see Fig.8 VR = VRRMmax; Tj = 150 C; see Fig.8 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.13 - - 700 - - - MIN. - - - - - - TYP.
BYV99
MAX. 1.5 2.7 - 5 75 15 V V V
UNIT
A A ns
Cd dI R -------dt
diode capacitance maximum slope of reverse recovery current
f = 1 MHz; VR = 0 V; see Fig.9 - when switched from IF = 1 A to - VR 30 V and dIF/dt = -1 A/s; see Fig.12
75 -
- 3
pF A/s
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m; see Fig.11. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 46 100 UNIT K/W K/W
2003 Mar 04
3
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
GRAPHICAL DATA
BYV99
MRC270
MRC269
handbook, halfpage
1.2
handbook, halfpage
0.8
IF(AV) IF(AV) (A) 0.8 (A) 0.6
0.4
0.4 0.2
0 0 100 Ttp ( C)
o
0 200 0 100 Tamb ( oC) 200
a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.
a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.11. Switched mode application.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
2003 Mar 04
4
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
BYV99
MRC272
handbook, full pagewidth
10
I FRM (A) 8 = 0.05
6
0.1
4
0.2
0.5 2 1.0
0 -2 10
10
-1
1
10
10 2
10 3
tp (ms)
10 4
Ttp = 50C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj(max) at VRRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MRC271
handbook, full pagewidth
5.0
I FRM (A) 4.0
= 0.05
3.0
0.1
2.0
0.2
0.5 1.0 1.0
0 -2 10
10
-1
1
10
10 2
10 3
tp (ms)
10 4
Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj(max) at VRRM = 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
2003 Mar 04
5
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
BYV99
MGC593
MRA948
handbook, halfpage
3
handbook, halfpage
6
P (W)
a=3 2.5 2
1.57 1.42
IF (A) 4
2
1
2
0 0 1 IF(AV) (A) 2
0 0 2 4 VF (V) 6
a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.6
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Dotted line: Tj = 150 C. Solid line: Tj = 25 C.
Fig.7
Forward current as a function of forward voltage; maximum values.
10 2 handbook, halfpage IR (A)
MGC594
10 2 handbook, halfpage
MGC592
Cd (pF)
10
10
1 0 100 Tj ( C)
o
1 200 1 10
102
VR (V)
10
3
VR = VRRMmax.
f = 1 MHz; Tj = 25 C.
Fig.8
Reverse current as a function of junction temperature; maximum values.
Fig.9
Diode capacitance as a function of reverse voltage; typical values.
2003 Mar 04
6
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
BYV99
handbook, halfpage
200 Tj
MGK645
handbook, halfpage
50 25
(C)
7 100 50
2 3 0 0 50 VR (%VRmax) 100
MGA200
Solid line = VR; dotted line = VRRM; = 0.5.
Fig.10 Maximum permissible junction temperature as a function of maximum reverse voltage percentage.
Dimensions in mm.
Fig.11 Device mounted on a printed-circuit board.
IF handbook, halfpage dI F dt t rr 10% t dI R dt 100% IR
MGC499
Fig.12 Reverse recovery definitions.
2003 Mar 04
7
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
BYV99
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.13 Test circuit and reverse recovery time waveform and definition.
2003 Mar 04
8
Philips Semiconductors
Ultra fast low-loss controlled avalanche rectifier
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
D
DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.81 D max. 3.81 G max. 4.57 L min. 28

(1)
Product specification
BYV99
SOD57
k
a
b
L
G
L
0
2.5 scale
5 mm
Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD57 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-10-14
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9
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BYV99
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Mar 04
10
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
NOTES
BYV99
2003 Mar 04
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp12
Date of release: 2003
Mar 04
Document order number:
9397 750 10978

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